Laser Ablation Inductively Coupled Plasma Mass Spectrometry Analysis of Multilayer Thin Film Thickness of PbS Quantum Dot Photovoltaic Devices
10.19756/j.issn.0253-3820.241271
- VernacularTitle:激光剥蚀电感耦合等离子体质谱分析硫化铅量子点光电器件多层薄膜厚度
- Author:
Ding-Wen ZHANG
1
;
Hui-Lai LI
;
Fan LI
;
Wei GUO
;
Lan-Lan JIN
;
Sheng-Hong HU
Author Information
1. 中国地质大学(武汉)地球科学学院生物地质与环境地质国家重点实验室,武汉 430074
- Keywords:
Laser ablation inductively coupled plasma mass spectrometry;
Depth profile;
Film thickness;
Ablation cell;
Photovoltaic film materials;
Lead sulfide
- From:
Chinese Journal of Analytical Chemistry
2024;52(10):1609-1618
- CountryChina
- Language:Chinese
-
Abstract:
Accurate determination of the thickness of multi-layered nanofilm materials is of great importance to advance the development of thin film deposition technology and ensure the quality assurance of photovoltaic materials.Laser ablation inductively coupled plasma mass spectrometry(LA-ICP-MS)has been successfully employed for depth profiling of thin film materials,such as metal coatings.However,the accuracy of interface discrimination and thin layer thickness measurement is limited by the mixing effects of elemental signals.In this work,a high-depth resolution method for measuring the thin film thickness of lead sulfide(PbS)colloidal quantum dot(CQD)photovoltaic devices by LA-ICP-MS was introduced.The influence of different laser parameters on the mixing effects of element signals during the ablation process was compared,and the results showed that the laser ablation behavior of multi-layered nanofilm materials were improved and the mixing of element signals were reduced by optimizing parameters such as laser energy density and spot diameter.Meanwhile,a self-developed aerosol rapid wash-out small volume tubular ablation cell was used to effectively improve the aerosol transport efficiency,and the wash-out time of aerosol was(1.60±0.6)s.Compared with commercial cylindrical ablation cells,the depth profile of multi-layer thin film samples was clearer.The depth profile of the interlayer interface showed a significant melting phenomenon during the ablation of the PbS CQD layer,leading to severe mixing of elemental signals at the PbS/ZnO layer interface.Under the conditions such as 2.5 J/cm2 laser energy,32 μm spot diameter,and 1 Hz repetition rate,the average ablation rates of Au,PbS and ZnO layers in PbS CQD photovoltaic devices were(60±2)nm/pulse,(69±5)nm/pulse,and(22±2)nm/pulse,with depth resolution of(26±2)nm,(213±11)nm,and(68±6)nm,respectively.The thickness of PbS CQD photovoltaic device films from the same batch was determined,and the test results exhibited good consistency with scanning electron microscope(SEM)measurement values,with a relative deviation of less than 6％.This method could accurately determine the thickness of nanoscale multilayer thin film samples,which was crucial for improving the performance of photovoltaic devices and controlling product quality.
