PURPOSE: In order to obtain basic data for treatment plan in radiosurgery, we measured small fields of 6 MV X-rays and compared the measured data with our Monte Carlo simulations for the small fields. MATERIALS AND METHODS: The small fields of 1.0, 2.0 and 3.0 cm in diameter were used in this study. Percentage depth dose (PDD) and beam profiles of those fields were measured and calculated. A small semiconductor detector, water phantoms, and a remote control system were used for the measurement. Monte Carlo simulations were performed using the EGS4 code with the input data prepared for the energy distribution of 6 MV X-rays, beam divergence, circular fields and the geometry of the water phantoms. RESULTS: In the case of PDD values, the calculated values were lower than the measured values for all fields and depths, with the differences being 0.3 to 5.7% at the depths of 2.0 to 20.0 cm and 0.0 to 8.9% at the surface regions. As a result of the analysis of beam profiles for all field sizes at a depth of 10cm in water phantom, the measured 90% dose widths were in good agreement with the calculated values, however, the calculated penumbra radii were 0.1 cm shorter than measured values. CONCLUSION: The measured PDDs and beam profiles agreement with the Monte Carlo calculations approximately. However, it is different when it comes to calculations in the area of phantom surface and penumbra because the Monte Carlo calculations were performed under the simplified geometries. Therefore, we have to study how to include the actual geometries and more precise data for the field area in Monte Carlo calculations. The Monte Carlo calculations will be used as a useful tool for the very complicated conditions in measurement and verification.
Radiosurgery ; Semiconductors ; Water

This study is to develope a phantom for MOSFET (Metal Oxide Semiconductors Field Effect Transistors) dosimetry and compare the dosimetric properties of standard MOSFET and microMOSFET with the phantom. In this study, the developed phantom have two shape: one is the shape of semi-sphere with 10 cm diameters and the other one is the flat slab of 30 cm x 30 cm with 1 cm thickness. The slab phantom was used for calibration and characterization measurements of reproducibility, linearity and dose rate dependency. The semi-sphere phantom was used for angular and directional dependence on the types of MOSFETs. The measurements were conducted under 10 x 10 cm2 fields at 100 cm SSD with 6 MV photon of Clinac (21EX, Varian, USA). For calibration and reproducibility, five standard MOSFETs and microMOSFETs were repeatedly irradiated by 200 cGy five times. The average calibration factor was a range of 1.09+/-0.01~1.12+/-0.02 mV/cGy for standard MOSFETs and 2.81+/-0.03~2.85+/-0.04 mV/cGy for microMOSFETs. The response of reproducibility in the two types of MOSFETs was found to be maximum 2% variation. Dose linearity was evaluated in the range of 5 to 600 cGy and showed good linear response with R2 value of 0.997 and 0.999. The dose rate dependence of standard MOSFET and microMOSFET was within 1% for 200 cGy from 100 to 600 MU/min. For linearity, reproducibility and calibration factor, two types of MOSFETs showed similar results. On the other hand, the standard MOSFET and microMOSFET were found to be remarkable difference in angular and directional dependence. The measured angular dependence of standard MOSFET and microMOSFET was also found to be the variation of 13%, 10% and standard deviation of +/-4.4%, +/-2.1%. The directional dependence was found to be the variation of 5%, 2% and standard deviation of +/-2.1%, +/-1.5%. Therefore, dose verification of radiation therapy used multidirectional X-ray beam treatments allows for better the use of microMOSFET which has a reduced angular and directional dependence than that of standard MOSFET.
Calibration ; Hand ; Semiconductors ; Silver Sulfadiazine

For prompt gamma ray imaging for biomedical applications and environmental radiation monitoring, we propose herein a multiple-scattering Compton camera (MSCC). MSCC consists of three or more semiconductor layers with good energy resolution, and has potential for simultaneous detection and differentiation of multiple radio-isotopes based on the measured energies, as well as three-dimensional (3D) imaging of the radio-isotope distribution. In this study, we developed an analytic simulator and a 3D image generator for a MSCC, including the physical models of the radiation source emission and detection processes that can be utilized for geometry and performance prediction prior to the construction of a real system. The analytic simulator for a MSCC records coincidence detections of successive interactions in multiple detector layers. In the successive interaction processes, the emission direction of the incident gamma ray, the scattering angle, and the changed traveling path after the Compton scattering interaction in each detector, were determined by a conical surface uniform random number generator (RNG), and by a Klein-Nishina RNG. The 3D image generator has two functions: the recovery of the initial source energy spectrum and the 3D spatial distribution of the source. We evaluated the analytic simulator and image generator with two different energetic point radiation sources (Cs-137 and Co-60) and with an MSCC comprising three detector layers. The recovered initial energies of the incident radiations were well differentiated from the generated MSCC events. Correspondingly, we could obtain a multi-tracer image that combined the two differentiated images. The developed analytic simulator in this study emulated the randomness of the detection process of a multiple-scattering Compton camera, including the inherent degradation factors of the detectors, such as the limited spatial and energy resolutions. The Doppler-broadening effect owing to the momentum distribution of electrons in Compton scattering was not considered in the detection process because most interested isotopes for biomedical and environmental applications have high energies that are less sensitive to Doppler broadening. The analytic simulator and image generator for MSCC can be utilized to determine the optimal geometrical parameters, such as the distances between detectors and detector size, thus affecting the imaging performance of the Compton camera prior to the development of a real system.
Clothing ; Gamma Rays* ; Isotopes ; Radiation Monitoring ; Semiconductors

OBJECTIVES: The purpose of this study was to evaluate the exposure to arsenic in preventive maintenance (PM) engineers in a semiconductor industry by detecting speciated inorganic arsenic metabolites in the urine. METHODS: The exposed group included 8 PM engineers from the clean process area and 13 PM engineers from the ion implantation process area; the non-exposed group consisted of 14 office workers from another company who were not occupationally exposed to arsenic. A spot urine specimen was collected from each participant for the detection and measurement of speciated inorganic arsenic metabolites. Metabolites were separated by high performance liquid chromatography-inductively coupled plasma spectrometry-mass spectrometry. RESULTS: Urinary arsenic metabolite concentrations were 1.73 g/L, 0.76 g/L, 3.45 g/L, 43.65 g/L, and 51.32 g/L for trivalent arsenic (As3+), pentavalent arsenic (As5+), monomethylarsonic acid (MMA), dimethylarsinic acid (DMA), and total inorganic arsenic metabolites (As3+ + As5+ + MMA + DMA), respectively, in clean process PM engineers. In ion implantation process PM engineers, the concentrations were 1.74 g/L, 0.39 g/L, 3.08 g/L, 23.17 g/L, 28.92 g/L for As3+, As5+, MMA, DMA, and total inorganic arsenic metabolites, respectively. Levels of urinary As3+, As5+, MMA, and total inorganic arsenic metabolites in clean process PM engineers were significantly higher than that in the non-exposed group. Urinary As3+ and As5+ levels in ion implantation process PM engineers were significantly higher than that in non-exposed group. CONCLUSION: Levels of urinary arsenic metabolites in PM engineers from the clean process and ion implantation process areas were higher than that in office workers. For a complete assessment of arsenic exposure in the semiconductor industry, further studies are needed.
Arsenic* ; Cacodylic Acid ; Occupations ; Plants* ; Plasma ; Semiconductors* ; Spectrum Analysis

In this review paper, basic configurations of gamma detectors in SPECT and PET systems were reviewed together with key performance parameters of the imaging system, such as the detection efficiency, the spatial resolution, the contrast resolution, and the data acquisition time for quick understanding of the system-component relationship and future design of advanced systems. Also key elements of SPECT and PET detectors, such as collimators, gamma detectors were discussed in conjunction with their current and future trend. Especially development trend of new scintillation crystals, innovative silicon-based photo-sensors and futuristic room- temperature semiconductor detectors were reviewed for researchers who are interested in the development of future nuclear medical imaging instruments.
Diagnostic Imaging ; Diphosphonates ; Semiconductors ; Tomography, Emission-Computed, Single-Photon

Antigens ; analysis ; Microarray Analysis ; methods ; Quantum Dots ; Semiconductors

A study conducted between 1998-2001 on the semiconductor industry in Penang and Selangor found that irregular menstruation, dysmenorrhea and stress were identified as the three leading health problems by women workers from a checklist of 16 health problems. After adjusting for confounding factors, including age, working duration in current factory, and marital status, in a multiple logistic regression model, wafer polishing workers were found to experience significantly higher odds of experiencing irregular menstruation. Dysmenorrhea was found to be significantly associated with chemical usage and poor ventilation, while stress was found to be related to poor ventilation, noise and low temperatures.
Malaysia ; *Occupational Exposure ; *Occupational Health ; *Semiconductors ; *Women, Working

This article aims to provide a systematic review of the exposure assessment methods used to assign wafer fabrication (fab) workers in epidemiologic cohort studies of mortality from all causes and various cancers. Epidemiologic and exposure–assessment studies of silicon wafer fab operations in the semiconductor industry were collected through an extensive literature review of articles reported until 2017. The studies found various outcomes possibly linked to fab operations, but a clear association with the chemicals in the process was not found, possibly because of exposure assessment methodology. No study used a tiered assessment approach to identify similar exposure groups that incorporated manufacturing era, facility, fab environment, operation, job and level of exposure to individual hazardous agents. Further epidemiologic studies of fab workers are warranted with more refined exposure assessment methods incorporating both operation and job titleand hazardous agents to examine the associations with cancer risk or mortality.
Cohort Studies ; Epidemiologic Studies ; Methods* ; Mortality ; Retrospective Studies* ; Semiconductors* ; Silicon

A kind of adjustable external fixation device for lower extremity is designed. The circuit is mainly composed of TEC1-00703 semiconductor refrigeration chip, HZC-30A pressure sensor, STC89C52RC single chip microcomputer and other electrical components. It can realize the timing intelligent temperature control and meet the local fixed-point refrigeration. The design of adjustable structure and the application of intelligent air cushion can satisfy the full fixation of lower limbs of different individuals. Its operation does not need much medical knowledge. It can solve the problem of emergency transportation and follow-up treatment of lower limb injury in ice and snow sports. It has a good application prospect and universality.
External Fixators ; Fracture Fixation ; Humans ; Lower Extremity ; Refrigeration ; Semiconductors

OBJECTIVES: The purpose of this study was to measure the concentration of volatile organic compound (VOC)s originated from the chemicals used and/or derived from the original parental chemicals in the photolithography processes of semiconductor manufacturing factories. METHODS: A total of four photolithography processes in 4 Fabs at three different semiconductor manufacturing factories in Korea were selected for this study. This study investigated the types of chemicals used and generated during the photolithography process of each Fab, and the concentration levels of VOCs for each Fab. RESULTS: A variety of organic compounds such as ketone, alcohol, and acetate compounds as well as aromatic compounds were used as solvents and developing agents in the processes. Also, the generation of by-products, such as toluene and phenol, was identified through a thermal decomposition experiment performed on a photoresist. The VOC concentration levels in the processes were lower than 5% of the threshold limit value (TLV)s. However, the air contaminated with chemical substances generated during the processes was re-circulated through the ventilation system, thereby affecting the airborne VOC concentrations in the photolithography processes. CONCLUSION: Tens of organic compounds were being used in the photolithography processes, though the types of chemical used varied with the factory. Also, by-products, such as aromatic compounds, could be generated during photoresist patterning by exposure to light. Although the airborne VOC concentrations resulting from the processes were lower than 5% of the TLVs, employees still could be exposed directly or indirectly to various types of VOCs.
Humans ; Korea ; Light ; Parents ; Phenol ; Semiconductors ; Solvents ; Toluene ; Transcutaneous Electric Nerve Stimulation ; Ventilation ; Volatile Organic Compounds