Neural network for the quantum correction of nanoscale SOI mosfets
- Author:
Zunchao LI
1
Author Information
1. School of Electrical and Communication Eng.
- Publication Type:Journal Article
- Keywords:
Neural network;
Quantum effect;
SOI
- From:Academic Journal of Xi'an Jiaotong University
2006;18(2):118-121
- CountryChina
- Language:Chinese
-
Abstract:
The quantum effect of carrier distribution in nanoscale SOI MOSFETs is evident and must be taken into consideration in device modeling and simulation. In this paper, a backpropagation neural network was applied to predict the quantum density of carriers from the classical density, and the influence of the network structure on training speed and accuracy was studied. It was concluded that a carefully trained neural network with two hidden layers using the Levenberg-Marquardt learning algorithm could predict the carrier quantum density of SOI MOSFETs in very good agreement with Schrödinger Poisson equations.
