Simulation study of electrical impedance tomography based on approaching real finite-element model of brain
- VernacularTitle:在逼近真实脑有限元模型上实现电阻抗断层成像的仿真研究
- Author:
Wan-Jun SHUAI
;
Xiu-Zhen DONG
;
Feng FU
;
Youfu-Sheng
;
Rui-Gang LIU
;
Xue-Tao SHI
;
- Publication Type:Journal Article
- Keywords:
EIT brain simulation curve-fitting
- From:
Chinese Medical Equipment Journal
2003;0(11):-
- CountryChina
- Language:Chinese
-
Abstract:
This paper is to build a finite element model of brain with a real brain shapeon which simulation studies of electrical impedance tomography EIT in the brain is based. A curve of a real brain shape is simulated with the curve-fitting methods and EIT in the brain is finished with finite-element methods and Equipotential Lines Back-Projection algorithm.The locationarea and amplitude of the change of the resistivity are reconstructed accurately. But the image quality has to be further improved.This paper provides a basis for clinical applications of EIT in brain.
