Subthreshold current model of fully depleted dual material gate SOI MOSFET
- Author:
Jun SU
;
Zunchao LI
;
Lili ZHANG
- Publication Type:Journal Article
- Keywords:
asymmetrical halo;
dual material gate;
subthreshold current
- From:
Journal of Pharmaceutical Analysis
2007;19(2):135-137,171
- CountryChina
- Language:Chinese
-
Abstract:
Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.
